讲座人：张勇 电子科技大学 教授
时间: 2016年8月25日 16:00-17:00
地点: 海韵校区物理机电航空大楼438会议室
报告简介： The metal conductivity, the surface impedance and the skin depth of the metal film are investigated in the THz frequency band for more accurate designs. To verify the accuracy of the analysis, several THz passive components have been designed and fabricated using the deep reactive ion etching (DRIE) silicon micromachining technique. An E-plane 3dB coupler and a H-plane 10dB coupler are measured at the WR-2.2 (330~500GHz) frequency band, whose average insertion loss are both less than 1dB after deducting the intrinsic loss. Three waveguide band-pass filters are also designed and measured, operating separately at WR-2.2, WR-1.5 (500~750GHz) and WR-1.0 (750GHz~1100GHz) frequency band. In addition, the effects of the DRIE micromachining process on the component’s performance are discussed in detail, which is valuable to realize high-performance THz passive components based on the DRIE micromachining technique while the frequency is up to 1 THz or higher frequencies.
讲座人简介: 张勇，教授，博导，IEEE Senior member，型谱项目首席专家，电子科技大学电子工程学院微波工程系书记。主要研究领域为微波与毫米波集成电路，固态太赫兹技术等。作为项目负责人完成了多个项目的研制，并通过省部级技术鉴定。在国际国内刊物和会议上发表学术论文一百余篇，其中SCI收录五十余篇，EI收录八十余篇，以第一发明人申请专利11项，其中5项获授权。
